Plasma Enhanced Atomic Layer Deposition of Iridium Oxide for Application in Miniaturized Neural Implants

Abstract High quality recording of neuronal activities and electrical stimulation require neurotechnical implants with appropriate electrode material. Iridium oxide (IrOx) is an excellent choice material due to its biocompatibility, low electrochemical impedance, superior charge injection capacity, corrosion resistance, longevity, stability. Plasma enhanced atomic layer deposition (PE-ALD) a suitable precursor, like (Methylcyclopentadienyl) (1,5- cyclooctadiene) iridium, could be promising technique produce highly conformal performant IrOx-films at temperatures costs. Various studies have reported the iridium oxide, but usually very high temperatures. These processes are not for polymer substrates limit use such post-processing together active implants. In this work (1,5-cyclooctadiene) iridium(I) ((MeCp)Ir(COD)) precursor was used as approach depositing using temperature PE-ALD. This normally chemical vapour processes. First experiments were carried out on silicon 110 C°. The heated up 75 °C oxygen plasma coreactant. deposited films analysed EDX AFM, showing smooth surface ratio between elements oxygen.